NTE2668 silicon npn transistor high current switching features: adoption of fbet, mbit process large current capacitance low collector-to-emitter saturation voltage high speed switching high allowable power dissipation applications: dc-dc converter relay drivers lamp drivers motor drivers strobes absolute maximum ratings: (t a = +25 c unless otherwise specified) collector-base voltage, v cbo 80v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector-emitter voltage, v ces 80v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector-emitter voltage, v ceo 50v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter-base voltage, v ebo 6v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector current, i c continuous 8a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulsed 11a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . base current, i b 2a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector power dissipation, p c t a = +25 c 1.0w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t c = +25 c 15w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temprature, t j +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg -55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
electrical characteristics: (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit collector cutoff current i cbo v cb = 40v, i e = 0 - - 0.1 a emitter cutoff current i ebo v eb = 4v, i c = 0 - - 0.1 a dc current gain h fe v ce = 2v, i c = 500ma 200 - 560 gain-bandwidth product f t v ce = 10v, i c = 500ma - 330 - mhz output capacitance cob v cb = 10v, f = 1mhz - 28 - pf collector-to-emitter saturation voltage v ce i c = 3.5a, i b = 175ma - 160 240 mv i c = 2a , i b = 40ma - 110 170 mv base-to-emitter saturation voltage v be i c = 2a , i b = 40ma - 0.83 1.2 v collector-to-base breakdown voltage v cbo i c = 10 a, i e = 0 80 - - v collector-to-emitter breakdown voltage v ces i c = 100 a, r be = 80 - - v collector-to-emitter breakdown voltage v ceo i c = 1ma, r be = 50 - - v emitter-to-base breakdown voltage v ebo i c = 10 a, i c = 0 6 - - v turn-on time t on pulse width = 20 s, duty cycle 1%, 20i b1 = -20i b2 = i c = 2.5a, v cc = 25v - 30 - ns storage time t stg - 420 - ns fall time t f - 25 - ns bce .197 (5.0) .256 (6.5) .090 (2.3) .090 (2.3) .059 (1.5) .275 (7.0) .295 (7.5) .002 (0.5) .002(0.5) c
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